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Other articles related with "gate dielectric"：
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67203 |
Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) |
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Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (6): 67203-067203
[Abstract]
(640)
[HTML 1 KB]
[PDF 770 KB]
(153)
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18505 |
Ru Han(韩茹), Hai-Chao Zhang(张海潮), Dang-Hui Wang(王党辉), Cui Li(李翠) |
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Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer |
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Chin. Phys. B
2019 Vol.28 (1): 18505-018505
[Abstract]
(817)
[HTML 1 KB]
[PDF 792 KB]
(164)
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78503 |
Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平) |
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Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2018 Vol.27 (7): 78503-078503
[Abstract]
(868)
[HTML 1 KB]
[PDF 1160 KB]
(167)
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127304 |
Liu Chao-Wen (刘超文), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Lu Han-Han (卢汉汉) |
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High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment |
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Chin. Phys. B
2015 Vol.24 (12): 127304-127304
[Abstract]
(666)
[HTML 1 KB]
[PDF 343 KB]
(352)
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126701 |
Guan He (关赫), Lv Hong-Liang (吕红亮), Guo Hui (郭辉), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Wu Li-Fan (武利翻) |
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Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses |
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Chin. Phys. B
2015 Vol.24 (12): 126701-126701
[Abstract]
(587)
[HTML 1 KB]
[PDF 305 KB]
(413)
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96803 |
Xie Ying-Tao (谢应涛), Ouyang Shi-Hong (欧阳世宏), Wang Dong-Ping (王东平), Zhu Da-Long (朱大龙), Xu Xin (许鑫), Tan Te (谭特), Fong Hon-Hang (方汉铿) |
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Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces |
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Chin. Phys. B
2015 Vol.24 (9): 96803-096803
[Abstract]
(700)
[HTML 1 KB]
[PDF 379 KB]
(518)
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47302 |
Morteza Charmi |
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Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs |
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Chin. Phys. B
2015 Vol.24 (4): 47302-047302
[Abstract]
(631)
[HTML 0 KB]
[PDF 412 KB]
(405)
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38103 |
Jia Ren-Xu (贾仁需), Dong Lin-Peng (董林鹏), Niu Ying-Xi (钮应喜), Li Cheng-Zhan (李诚瞻), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Yang Fei (杨霏), Zhang Yu-Ming (张玉明) |
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Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1-x gate dielectrics on 4H-SiC |
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Chin. Phys. B
2015 Vol.24 (3): 38103-038103
[Abstract]
(741)
[HTML 0 KB]
[PDF 347 KB]
(391)
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76701 |
Liu Chen (刘琛), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Lü Hong-Liang (吕红亮) |
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Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor |
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Chin. Phys. B
2013 Vol.22 (7): 76701-076701
[Abstract]
(547)
[HTML 1 KB]
[PDF 287 KB]
(1362)
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67701 |
Sun Jia-Bao (孙家宝), Yang Zhou-Wei (杨周伟), Geng Yang (耿阳), Lu Hong-Liang (卢红亮), Wu Wang-Ran (吴汪然), Ye Xiang-Dong (叶向东), David Zhang Wei (张卫), Shi Yi (施毅), Zhao Yi (赵毅) |
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Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation |
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Chin. Phys. B
2013 Vol.22 (6): 67701-067701
[Abstract]
(715)
[HTML 1 KB]
[PDF 333 KB]
(635)
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57305 |
Ma Fei(马飞), Liu Hong-Xia(刘红侠), Kuang Qian-Wei(匡潜玮), and Fan Ji-Bin(樊继斌) |
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The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics |
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Chin. Phys. B
2012 Vol.21 (5): 57305-057305
[Abstract]
(1523)
[HTML 1 KB]
[PDF 245 KB]
(1086)
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57304 |
Ma Fei(马飞), Liu Hong-Xia(刘红侠), Kuang Qian-Wei(匡潜玮), and Fan Ji-Bin(樊继斌) |
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A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures |
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Chin. Phys. B
2012 Vol.21 (5): 57304-057304
[Abstract]
(1585)
[HTML 1 KB]
[PDF 180 KB]
(2158)
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48501 |
Li Cong(李聪), Zhuang Yi-Qi(庄奕琪), Zhang Li(张丽), and Bao Jun-Lin(包军林) |
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Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-$\kappa$ gate dielectric |
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Chin. Phys. B
2012 Vol.21 (4): 48501-048501
[Abstract]
(1178)
[HTML 1 KB]
[PDF 634 KB]
(559)
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17203 |
Mao Wei(毛维), Yang Cui(杨翠), Hao Yao(郝跃), Zhang Jin-Cheng(张进成), Liu Hong-Xia(刘红侠), Bi Zhi-Wei(毕志伟), Xu Sheng-Rui(许晟瑞), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Wang Chong(王冲), Yang Lin-An(杨林安), Zhang Jin-Feng(张金风), and Kuang Xian-Wei(匡贤伟) |
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Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT |
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Chin. Phys. B
2011 Vol.20 (1): 17203-017203
[Abstract]
(1910)
[HTML 0 KB]
[PDF 823 KB]
(1646)
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3542 |
Fang Ze-Bo(方泽波), Zhu Yan-Yan(朱燕艳), Wang Jia-Le(王佳乐), and Jiang Zui-Min(蒋最敏) |
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Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films |
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Chin. Phys. B
2009 Vol.18 (8): 3542-3546
[Abstract]
(1462)
[HTML 1 KB]
[PDF 1794 KB]
(784)
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768 |
Xu Gao-Bo(许高博) and Xu Qiu-Xia(徐秋霞) |
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Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition |
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Chin. Phys. B
2009 Vol.18 (2): 768-772
[Abstract]
(1350)
[HTML 1 KB]
[PDF 2177 KB]
(996)
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529 |
Xu Jing-Ping(徐静平), Chen Wei-Bing(陈卫兵), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), and Chan Chu-Lok(陈铸略) |
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Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment |
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Chin. Phys. B
2007 Vol.16 (2): 529-532
[Abstract]
(1457)
[HTML 1 KB]
[PDF 147 KB]
(499)
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325 |
Han De-Dong (韩德栋), Kang Jin-Feng (康晋锋), Lin Chang-Hai (林长海), Han Ru-Qi (韩汝琦) |
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Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics |
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Chin. Phys. B
2003 Vol.12 (3): 325-327
[Abstract]
(1435)
[HTML 1 KB]
[PDF 178 KB]
(526)
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